DTC114TKA npn digital transistor features ? built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) ? the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be set for operation, making device design easy absolute maximum ratings parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current-continuous i c 100 ma collector dissipation p c 200 mw junction temperature t j 150 storage temperature range t stg -55~150 electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =50ua, i e =0) 50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =1ma, i b =0) 50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =50ua, i c =0) 5 --- --- v i cbo collector cut-off current (v cb =50v, i e =0) --- --- 0.5 ua i ebo emitter cut-off current (v eb =4v, i c =0) h fe dc current gain (v ce =5v, i c =1ma) 100 300 600 --- v ce(sat) collector-emitter saturation voltage (i c =10ma, i b =1ma) --- --- 0.3 v r 1 input resistor 7 10 13 k f t transition frequency (v ce =10v, i c =-5ma, f=100mhz) --- 250 --- mhz
omponents 20736 marilla street chatsworth !"# $
% !"# mcc www. mccsemi .com revision: 1 2005/06/29 --- -- - 0.5 ua inches mm dim min max min max note a .113 .117 2.87 2.97 b .108 .112 2.75 2.85 c .061 .065 1.55 1.65 d .036 .038 .925 .975 e .073 .077 1.85 1.95 g .0016 .0039 .04 .100 h .044 .049 1.12 1.25 j .006 .007 .14 .17 k .013 .015 .34 .37 a b c d e g h j k suggested solder pad layout .087 2.200 inches mm .031 .800 .035 .900 .037 .950 .037 .950 dimensions sot-23-3l 3 1 2 1. base 2. emitter 3. collector tm micro commercial components
www. mccsemi .com revision: 1 2005/06/2 9 DTC114TKA mcc tm micro commercial components
|
